Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Reexamination Certificate
2005-05-13
2009-10-06
Huff, Mark F (Department: 1795)
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
C716S030000, C716S030000
Reexamination Certificate
active
07598005
ABSTRACT:
Data (pattern data) (21) of a mask data (2) to form a mask pattern is made into an octagon. An electron-beam lithography system has a high resolution, and it requires a polygonal pattern data having many more vertexes such as an octagon. With the use of such a pattern data, a photomask (3) having a mask pattern (22) being an aperture closer to a circle (approximated circle) can be obtained. Backed by this, it is possible to form resist patterns at smaller pitches without causing failures in manufacturing a device such as a reduction in resist film thickness, a disconnection between actual patterns such as of contact holes, and so forth. Further, it is possible to eliminate the factor of mask manufacturing process from the optical proximity correction to simplify the optical proximity correction, so that desired macro actual patterns can be formed easily and accurately.
REFERENCES:
patent: 2003/0008215 (2003-01-01), Mukherjee
patent: 2-1848 (1990-01-01), None
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patent: 04-067613 (1992-03-01), None
patent: 4-151661 (1992-05-01), None
patent: 2000-066366 (2000-03-01), None
Patent Abstracts of Japan, Publication No. 60136225 A, published on Jul. 19, 1985.
Korean Office Action mailed on May 29, 2006 of Japanese Patent Application of 04-067613.
Japanese Office Action dated Mar. 24, 2009 (mailing date), issued in corresponding Japanese Patent Application No. 2004-568760 with its partial English language translation.
Fujitsu Microelectronics Limited
Huff Mark F
Jelsma Jonathan
Westerman, Hattori, Daniels & Adrian , LLP.
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