Photomask and exposure method

Details Photomask and exposure method Photomask and exposure method

2007-03-07

2009-08-11

Rosasco, Stephen (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

Reexamination Certificate

active

07572558

ABSTRACT:
A photomask is to be used for exposure of a semiconductor wafer with the dipole illumination light, and includes a main opening, a first assist opening, a second assist opening, a third assist opening and a fourth assist opening. Each of the assist openings is located so that the central point thereof is deviated from both of a first straight line parallel to a first direction and passing the central point of the main opening, and a second straight line parallel to a second direction and passing the central point of the main opening. Here, the first direction is the direction among in-plane directions of the photomask that is parallel to an alignment direction of an effective light source distribution of the dipole illumination light. Also, the second direction is the direction among in-plane directions of the photomask that is perpendicular to the alignment direction.

REFERENCES:
patent: 7246342 (2007-07-01), Hsu et al.
patent: 2004/0166422 (2004-08-01), Yamazoe et al.
patent: 11-135402 (1999-05-01), None

Affiliated with

Also associated with

Rating

Photomask and exposure method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Photomask and exposure method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Photomask and exposure method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4085745