Photomask and a manufacturing method thereof

Details Photomask and a manufacturing method thereof Photomask and a manufacturing method thereof

1996-04-10

1997-12-23

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430322, G03F 900

Patent

active

057006067

ABSTRACT:
A half-tone film, a light-shielding film and resist are formed on a transparent substrate in this order, and the resist is removed by adjusting the dosage of exposure for each area so that film-thickness differences are provided. A predetermined pattern is formed on the half-tone film and the light-shielding film by utilizing the film-thickness differences. This half-tone pattern is a pattern to be copied onto resist on a wafer. Moreover, the light-shielding pattern is formed at a place corresponding to a position at which a sidelobe is generated. Thus, it becomes possible to prevent unwanted patterns from being copied, where the half-tone film is maintained to exert high light contrast.

REFERENCES:
patent: 5487963 (1996-01-01), Sugawara
patent: 5547787 (1996-08-01), Ito et al.
"The Control of Sidelobe Intensity with Arrangement of the Chrome Pattern (COSAC) in Half-Tone Phase-Shifting Mask" S. Kobayashi et a, Extended Abstracts of the 1995 International Conference on Solid State Devices and Materials, Osaka, May 1995, pp. 935-937.

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