Photomask

Details Photomask Photomask

2011-06-28

2011-06-28

Huff, Mark F (Department: 1721)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C359S360000

Reexamination Certificate

active

07968255

ABSTRACT:
A photomask which improves the imaging performance that the photomask has and forming a good micro image on a wafer in photolithography with a half pitch of 60 nm or less. Provided is a photomask used for photolithography using an ArF excimer laser as an exposing source for immersion exposure by quadrupole-polarized illumination with a high-NA lens. The photomask includes a mask pattern of a light shielding film or semi-transparent film on a transparent substrate, and further, given that a thickness of the light shielding film or semi-transparent film is “t” nm, a refractive index is “n”, an extinction factor is “k”, and a bias of a space part of the mask pattern is “d” nm, when “t”, “d”, “n” and “k” are adjusted and the photomask is used for the photolithography, optical image contrast takes a value exceeding 0.580.

REFERENCES:
patent: 5660956 (1997-08-01), Tomofuji et al.
patent: 5700606 (1997-12-01), Kobayashi et al.
patent: 7029803 (2006-04-01), Becker et al.
patent: 06-075361 (1994-03-01), None
patent: 2003-005349 (2003-01-01), None
patent: 2003-084418 (2003-03-01), None
patent: 2004-111678 (2004-04-01), None
patent: 2005-093522 (2005-04-01), None
patent: 2005-268489 (2005-09-01), None
patent: 2005/076045 (2005-08-01), None
International Search Report: PCT/JP2007/064249.

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