Photoluminescence method of testing double heterostructure wafer

Details Photoluminescence method of testing double heterostructure wafer Photoluminescence method of testing double heterostructure wafer

1982-09-10

1984-04-10

Karlsen, Ernest F.

Electricity: measuring and testing

Measuring, testing, or sensing electricity, per se

With rotor

324158R, G01R 3126

Patent

active

044424027

ABSTRACT:
Under photoluminescence (PL) excitation, the lateral spreading of photo-excited carriers can suppress the photoluminescence signal from double heterostructure (DH) wafers containing a p-n junction. In any DH with a p-n junction in the active layer, PL is suppressed if the power of the excitation source does not exceed a threshold value. This effect can be advantageously used for a nondestructive optical determination of the top cladding layer sheet conductance as well as p-n junction misplacement, important parameters for injection lasers and LEDs.

REFERENCES:
patent: 4051437 (1977-09-01), Lile et al.
patent: 4287473 (1981-09-01), Sawyer
patent: 4313125 (1982-01-01), Hartman et al.
patent: 4333051 (1982-06-01), Goodman
Johnston, Jr., W. D.; "Macroscopic . . ."; Applied Physics Letters; vol. 24; No. 10; May 15, 1974; pp. 494-496.
Henry et al.; "Nonradiative . . ."; Journal of Applied Physics; vol. 48; No. 9; Sep. 1977; pp. 3962-3970.

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