Photolithography using interdependent binary masks

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Reexamination Certificate

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Details

C430S313000, C430S323000, C430S329000, C430S330000, C430S394000

Reexamination Certificate

active

07494749

ABSTRACT:
The invention, in its various aspects, is an interdependent binary photomask for use in a photolithography operation in a semiconductor fabrication process, a method for fabricating these interdependent photomasks, and a method of using the same. The photomask comprises a first binary reticle and a second binary reticle. Each binary reticle includes a pattern formed on a plate, but the pattern formed on one plate is interdependent with the pattern formed on the other plate so that the reticles are used in tandem to transfer the pattern onto wafers having features residing in different focal planes. The method of fabricating the interdependent binary photomask consequently includes specifying a first and a second portion of a circuit layout, the first and second circuit portions being interdependent. The first and second portions are digitized and used to form first and second interdependent patterns on separate reticles. In use, the first reticle is aligned with a portion of a wafer and the wafer portion is then exposed. The second reticle is then aligned with the same wafer portion and the wafer portion exposed.

REFERENCES:
patent: 5424154 (1995-06-01), Borodovsky
patent: 5451488 (1995-09-01), Fukuba
patent: 5532090 (1996-07-01), Borodovsky
patent: 5702848 (1997-12-01), Spence
patent: 5753417 (1998-05-01), Ulrich
patent: 5766806 (1998-06-01), Spence
Liegl et al., “Lithography Process Cost Considerations for 130 nm Groundrules,”Arch Microlithography Symposium(Arch Chemicals, Inc. Interface '99), pp. 217-223 (Nov. 14-16, 1999).

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