Photolithography method including a double exposure/double bake

Details Photolithography method including a double exposure/double bake Photolithography method including a double exposure/double bake

2005-04-19

2005-04-19

Duda, Kathleen (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C430S330000, C430S394000, C430S322000

Reexamination Certificate

active

06881524

ABSTRACT:
A photoresist exposure process is disclosed which produces features which are substantially smaller than the aperture dimension of the mask used to make the feature. The smaller feature size results from a double exposure of the photoresist, combined with a double baking process to create the features in the photoresist. The double baking process thins the layer of photoresist, prior to the second exposure, thereby improving the resolution of the mark created by the second exposure on the photoresist. The process also uses a binary bias mask through which the first exposure is made, which overlaps with the area of the second exposure, to allow a process tolerance for the realignment of the mask over the wafer for the second exposure.

REFERENCES:
patent: 5407785 (1995-04-01), Leroux
patent: 5631112 (1997-05-01), Tsai et al.
patent: 5663893 (1997-09-01), Wampler et al.
patent: 5863712 (1999-01-01), Von Bunau et al.
patent: 6280887 (2001-08-01), Lu
patent: 6301008 (2001-10-01), Ziger et al.
patent: 6311319 (2001-10-01), Tu et al.
Handbook of Microlithography, Micromachining, and Microfabrication; vol. 1: Microlithography, Editor P. Rai-Choudhury; (1997), p. 79.

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