Photolithography method for reducing effects of lens aberration

Details Photolithography method for reducing effects of lens aberration Photolithography method for reducing effects of lens aberration

2006-03-21

2006-03-21

Young, Christopher G. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Including control feature responsive to a test or measurement

C430S022000, C430S312000, C430S313000, C430S316000

Reexamination Certificate

active

07014965

ABSTRACT:
A photolithography method for reducing effects of lens aberration. A photolithography apparatus is provided with a first reticle therein, having at least one first rectangular pattern thereon, a first photolithography is performed on a wafer by the photolithography apparatus to transfer the first rectangular pattern thereonto by simultaneously moving the first reticle and the wafer in a direction parallel to the short sides of the first rectangular pattern. The first reticle is replaced with a second reticle having at least one second rectangular pattern thereon and a second photolithography is performed by the photolithography apparatus to transfer the second rectangular pattern onto the wafer by simultaneously moving the second reticle and the wafer in a 90° plus or minus rotation in a direction parallel to the short sides of the second rectangular pattern.

REFERENCES:
patent: 6529623 (2003-03-01), Kent
patent: 6563564 (2003-05-01), de Mol et al.
patent: 2003/0091913 (2003-05-01), Shiode

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