Photolithography control system and method using latent image me

Details Photolithography control system and method using latent image me Photolithography control system and method using latent image me

1993-11-18

1994-08-16

Kight, III, John

Radiation imagery chemistry: process, composition, or product th

Including control feature responsive to a test or measurement

2504921, 2504922, 430311, 437 7, 437 8, G03C 500, H01L 2100, G01R 3126

Patent

active

053386302

ABSTRACT:
A method of and apparatus for processing semiconductor wafers which include observing optical characteristics of exposed undeveloped photoresist, without removing the wafers from the stepper is disclosed. The present invention includes the steps of loading a wafer having a layer of photoresist into a photolithography system, exposing the photoresist in accordance with an initial set of control parameters including exposure time, position of the wafer within the photolithography system, and/or focus change. Prior to developing the photoresist, optical characteristics of the exposed photoresist are observed using a phase contrast microscope which detects latent images. Then, according to the observations of the latent image, the initial set of control parameters are adjusted to generate a second set of control parameters.

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K. C. Hickmn; "Use Of Diffracted Light From Latent Images To Improve Lithography Control"; SPIE Microlithography Conference; 1464-22, Mar. 5, 1991.
Thomas E. Adams; "Applications of Latent Image Metrology In Microlithography"; SPIE Microlithography Conference; 1464-26; Mar. 5, 1991.
Karl W. Edmark et al.; "Stepper Overlay Calibration Using Alignment To A Latent Image"; SPIE vol. 538; Optical Microlithography IV; pp. 91-101 (1985).

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