Radiation imagery chemistry: process – composition – or product th – Including control feature responsive to a test or measurement
Patent
1992-03-05
1994-02-01
Kight, III, John
Radiation imagery chemistry: process, composition, or product th
Including control feature responsive to a test or measurement
2504921, 2504922, 430311, 437 7, 437 8, G03C 500, H01L 2100, G01R 3126
Patent
active
052831418
ABSTRACT:
A method of and apparatus for processing semiconductor wafers which include observing optical characteristics of exposed undeveloped photoresist, without removing the wafers from the stepper is disclosed. The present invention includes the steps of loading a wafer having a layer of photoresist into a photolithography system, exposing the photoresist in accordance with an initial set of control parameters including exposure time, position of the wafer within the photolithography system, and/or focus change. Prior to developing the photoresist, optical characteristics of the exposed photoresist are observed using a phase contrast microscope which detects latent images. Then, according to the observations of the latent image, the initial set of control parameters are adjusted to generate a second set of control parameters.
REFERENCES:
patent: 4364633 (1982-12-01), Verber et al.
patent: 4811055 (1989-03-01), Hirose
patent: 4929083 (1990-05-01), Brunner
patent: 5077085 (1991-12-01), Schnur et al.
patent: 5079600 (1992-01-01), Schnur et al.
K. C. Hickman; "Use Of Diffracted Light From Latent Images To Improve Lithography Control"; SPIE Microlithography Conference; 1464-22, Mar. 5, 1991.
Thomas E. Adams; "Applications of Latent Image Metrology in Microlithography"; SPIE Microlithography Conference; 1464-26; Mar. 5, 1991.
Karl W. Edmark & Christopher P. Ausschnitt; "Stepper Overlay Calibration Using Alignment To A Latent Image"; SPIE vol. 538; Optical Microlithography IV; pp. 91-101 (1985).
Allison, Jr. Robert W.
Kovacs Ronald P.
Yoon Eui-sik
Kight III John
Mosley T.
National Semiconductor
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