Photolithographic projection apparatus using light in the far ul

Details Photolithographic projection apparatus using light in the far ul Photolithographic projection apparatus using light in the far ul

1980-04-10

1981-11-24

Rosenberger, R. A.

350443, G02B 1708

Patent

active

043020798

ABSTRACT:
A lens design for submicron photolithography images a mask (21) onto a semiconductor wafer (23) using light in the far ultraviolet. Illustratively, the lens design is a modified Dyson imaging system comprising a thick plano-convex lens (31), a beam splitter, adjacent to the planar surface of the plano-convex lens comprising two right angle prisms (34, 35) separated by a dielectric interface (36), and an aspherical mirror (32) located on the convex side of the lens. Stress-induced birefringence is used to rotate the plane of polarization of the object radiation.

REFERENCES:
patent: 3536380 (1970-10-01), Ferguson
patent: 4103989 (1978-08-01), Rosin
patent: 4171870 (1979-10-01), Bruning et al.
patent: 4171871 (1979-10-01), Dill et al.
Dyson, J., "Unit Magnification Optical System without Seidel Aberrations", JOSA, vol. 49, No. 7 (Jul. 1959) pp. 713-716.
Wynne, C. G., "A Unit-Power Telescope for Projection Copying", Optical Instruments and Techniques 1969, edited by J. H. Dickson, Oriel Press, England, 1970, pp. 429-434.
Born et al., "Stress Birefringence", Principles of Optics, McMillan Co., NY, 1965, pp. 703-705.

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