Photolithographic mask having half tone main features and...

Details Photolithographic mask having half tone main features and... Photolithographic mask having half tone main features and...

2002-07-30

2008-12-16

Huff, Mark F (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

Reexamination Certificate

active

07465522

ABSTRACT:
A photolithographic mask having half tone main features and perpendicular half tone assist features. One embodiment provides for the exposure of radiation-sensitive resist layers on semiconductor substrates. The mask has at least one radiation-transmissive substrate and at least one half-tone layer. The half-tone layer is used to provide main features, the main features being formed in such a way that the pattern formed by the main features is transferred into the resist layer when irradiated, and the half-tone layer is also used to provide assist features, the assist features being formed substantially perpendicular to the main features in such a way that the pattern formed by the assist features is not transferred into the resist layer when irradiated.

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