Photolithographic mask having a structure region covered by...

Details Photolithographic mask having a structure region covered by... Photolithographic mask having a structure region covered by...

2006-07-18

2006-07-18

Rosasco, S. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C378S035000, C430S961000

Reexamination Certificate

active

07078134

ABSTRACT:
A photolithographic mask for patterning a photosensitive material, in particular on a wafer, has at least one structure region for imaging a structure on the photosensitive material, and an absorber structure for absorbing incident radiation. At least one structure region is provided and has at least one thin protective coating of only a few atomic layers made of chemically and mechanically resistive material selected from Al2O3, Ta2O5, ZrO2, and HfO2formed by atomic layer chemical vapor deposition (ALCVD) so that the protective coating constitutes a negligible alteration of nominal or critical dimensions for the structure region, and in which additional absorption or reflection losses are negligibly low. In this way, the photolithographic mask can be cleaned chemically and/or mechanically, without the structure regions being attacked and damaged by the chemical and/or mechanical cleaning media. Furthermore, a plurality of methods are possible for fabricating this photolithographic mask.

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patent: 2003/0001176 (2003-01-01), Li et al.
patent: 2287671 (2001-04-01), None
patent: 38 42 481 (1989-06-01), None

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