Photogenerated carrier collection of a solid state image sensor

Details Photogenerated carrier collection of a solid state image sensor Photogenerated carrier collection of a solid state image sensor

1997-04-11

1999-01-12

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257444, 257445, H01L 3100

Patent

active

058594620

ABSTRACT:
An image sensor comprising a semiconductor of a first conductivity type having a plurality of pixels formed thereon; and a region heavily doped with the first conductivity type semiconductor beneath the pixels formed such that there is a gradient formed within the semiconductor below the pixels that is capable of directing photogenerated electrons toward the pixels and away from the heavily doped region. The gradient is formed by having a more lightly doped layer formed upon the heavily doped layer and allowing a gradient to from around the junction of the two layers.

REFERENCES:
patent: 4579626 (1986-04-01), Wallace
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patent: 4997784 (1991-03-01), Thenoz et al.
patent: 5051798 (1991-09-01), Kimura
patent: 5130774 (1992-07-01), Stevens et al.
patent: 5404039 (1995-04-01), Watanabe
Yasuo Ishihara, et al., Interline CCD Image Sensor With An Antiblooming Structure, pp. 83-88, IEEE Jan., 1984.
Tetsuro Kumesawa, High Resulution CCD Image Sensors With Reduced Smear, pp. 1451-1456, IEEE, Aug., 1985.

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