Photoelectronic conversion device

Details Photoelectronic conversion device Photoelectronic conversion device

1983-02-01

1985-03-26

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

136244, 136246, 357 30, H01L 3106

Patent

active

045075190

ABSTRACT:
In the typical embodiment of the invention described herein, a photoelectronic conversion device comprises a transparent insulative substrate, a first transparent electrode layer of Sn-incorporated In.sub.2 O.sub.3 having a relatively low sheet resistance and a thickness of about 1000 .ANG., a second transparent electrode layer of SnO.sub.2 having a relatively high plasma resistance and a thickness of several tens to several hundreds of Angstroms, an amorphous semiconductor film formed by a plasma CVD process at a substrate temperature of about 200.degree.-250.degree. C., and a metal electrode.

REFERENCES:
patent: 4064521 (1977-12-01), Carlson
patent: 4281208 (1981-07-01), Kuwano et al.
patent: 4292092 (1981-09-01), Hanak
patent: 4450316 (1984-05-01), Hamakawa et al.
D. E. Carlson, "Amorphous Silicon Solar Cells", IEEE Trans Electron Devices, ED-24, Apr. 1977, pp. 449-453.
D. E. Carlson, "Amorphous Silicon Solar Cells", Quarterly Report No. 6, DOE Contrast EY-76-c-03-1286, Jan. 1978, pp. 23-26.
O. Kuboi, "Degradation of ITO Film is Glow-Discharge Plasma", Japanese J. Appl. Phys., 20(11), Nov. 1981, pp. L783-L786.

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