Photoelectrochemical processing of InP-type devices

Details Photoelectrochemical processing of InP-type devices Photoelectrochemical processing of InP-type devices

1981-06-19

1983-06-21

Valentine, Donald R.

Chemistry: electrical and wave energy

Processes and products

Electrostatic field or electrical discharge

2041294, 20412995, C25F 312

Patent

active

043892914

ABSTRACT:
A process is described for photoelectrochemically etching n-type indium phosphide and closely related compound semiconductors such as indium gallium arsenide and indium gallium arsenide phosphide. Such a process is advantageous because the etching is confined to where light is incident to the surface of the semiconductor. In addition, the shape of the configuration etched out of the semiconductor can be controlled by the light incident on the surface of the semiconductor. For example, undercutting can be minimized by use of parallel rays incident on the surface of the semiconductor to be etched.

REFERENCES:
patent: 3706645 (1972-12-01), Lasser
patent: 4283259 (1981-08-01), Melcher et al.
patent: 4351706 (1982-09-01), Chappell et al.
Lubzens, D., "Photoetching of InP Mesas for Production of mm-Wave Transferred-Electron Oscillators", Elec. Letters, pp. 171-172.

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