Photoelectrochemical processing of III-V semiconductors

Details Photoelectrochemical processing of III-V semiconductors Photoelectrochemical processing of III-V semiconductors

1981-06-22

1983-09-13

Kaplan, G. L.

Chemistry: electrical and wave energy

Processes and products

Electrostatic field or electrical discharge

156643, C25F 312

Patent

active

044040725

ABSTRACT:
A photoelectrochemical process is described for anisotropic etching of intrinsic III-V compound semiconductors. Such a process is highly advantageous because the etching takes place only where light is incident on the surface of the semiconductor. Thus, various patterns can be etched into the semiconductor surface without the use of a mask, undercutting is minimized where masks are used and the shape of the hole etched out of the surface can be controlled.

REFERENCES:
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A. A. England et al., Solid-State Electronics, 1981, vol. 24, pp. 337-342.

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