Photoelectrochemical etching of semiconductors

Details Photoelectrochemical etching of semiconductors Photoelectrochemical etching of semiconductors

1981-01-08

1983-01-18

Valentine, Donald R.

Chemistry: electrical and wave energy

Processes and products

Electrostatic field or electrical discharge

20412943, 20412975, 20412995, 204DIG9, C25F 312

Patent

active

043690998

ABSTRACT:
A process is described for etching p-type semiconductors using a photoelectrochemical etching process. This etching process is highly advantageous because the etching site is highly defined by the incident light and the etching rate can be controlled in a number of ways including light intensity and electrode potential.

REFERENCES:
patent: 3265599 (1966-08-01), Soonpaa
patent: 3706645 (1972-12-01), Lasser
patent: 3890215 (1975-06-01), Dilorenzo et al.
patent: 4154663 (1979-05-01), Adams
patent: 4303482 (1981-12-01), Buhne et al.
"Photoetching and Plating of Gallium Arsenide", Journal of Elec. Chem. Soc., vol. 108, No. 8, pp. 790-794.
"Selective Photoetching of Gallium Arsenide", Journal of Elec. Chem. Soc., vol. 119, No. 8, pp. 1063-1078.
"Photoetching of InP Mesas for Prod. of M.M. Wave Transferred Electron Oscillators", Electronics Letters, vol. 13, pp. 171-172.
"Interpretation of Selective Etching of III-V Compds. on the Basis of Semiconductor Electrochemistry", J.E.C. Soc., vol. 126, No. 5, pp. 855-859.
"Diffraction Gratings Produced on a GaAs Surface by Interference Photoetching", Soviet Physics Technical Physics, vol. 21, No. 7, pp. 857-859.

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