Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Reexamination Certificate
2009-05-12
2011-11-08
Fourson, III, George (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
C438S094000, C438S746000, C257SE21217
Reexamination Certificate
active
08053264
ABSTRACT:
A method for photoelectrochemical (PEC) etching of a p-type semiconductor layer simply and efficiently, by providing a driving force for holes to move towards a surface of a p-type cap layer to be etched, wherein the p-type cap layer is on a heterostructure and the heterostructure provides the driving force from an internal bias generated internally in the heterostructure; generating electron-hole pairs in a separate area of the heterostructure than the surface to be etched; and using an etchant solution to etch the surface of the p-type layer.
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DenBaars Steven P.
Hu Evelyn Lynn
Nakamura Shuji
Schmidt Mathew C.
Tamboli Adele
Fourson, III George
Gates & Cooper LLP
The Regents of the University of California
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