Electrolysis: processes – compositions used therein – and methods – Electrolytic erosion of a workpiece for shape or surface... – With programmed – cyclic – or time responsive control
Patent
1996-06-28
1998-10-20
Gorgos, Kathryn L.
Electrolysis: processes, compositions used therein, and methods
Electrolytic erosion of a workpiece for shape or surface...
With programmed, cyclic, or time responsive control
205655, 205685, C25F 312
Patent
active
058242066
ABSTRACT:
Photoelectrochemical etching of p-InP in various nitric acid solutions demonstrates that the semiconductor undergoes etching with favorable etch rates in the negative potential region. The etch rate increases with decreasing potentials to -1.0 V and exhibits a slight decrease with lower potentials. Etch rates exhibit a linear relation with relative light intensity. The values of etch rate for p-InP polarized at -1.0 V vary from 0.07 to 1.24 .mu.m/min. for HNO.sub.3 solutions with concentrations ranging from 1.0 to 5.0 M. Etch rates determined in the 4 M acid range were reproducible within 4%. With acid concentrations greater than 5 M, the etch rates were observed to be inconsistent. XPS studies indicated that these inconsistencies are probably due to the formation of organic nitrogen compounds on the surface of p-InP.
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Collier Stanton E.
Gorgos Kathryn L.
Mayekar Kishor
The United States of America as represented by the Secretary of
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