Photoelectrochemical etching of n-type gallium arsenide

Details Photoelectrochemical etching of n-type gallium arsenide Photoelectrochemical etching of n-type gallium arsenide

1983-10-24

1984-11-13

Valentine, Donald R.

Chemistry: electrical and wave energy

Processes and products

Electrostatic field or electrical discharge

2041294, 2041296, 20412975, 20412995, C25F 312, C25F 314

Patent

active

044824424

ABSTRACT:
A process is described for photoelectrochemically etching n-type gallium arsenide and closely related compound semiconductors such as gallium aluminum arsenide and gallium arsenide phosphide. Such a process is advantageous because the etching is confined to where light is incident to the surface of the semiconductor. In addition, the shape of the configuration etched out of the semiconductor can be controlled by the light incident on the surface of the semiconductor. For example, undercutting can be minimized by use of parallel rays incident on the surface of the semiconductor to be etched.

REFERENCES:
patent: 3706645 (1972-12-01), Lasser
patent: 4142953 (1979-03-01), Lovelace
Hollan et al., "Interpretation of Selective Etching of III-V Compds. on the Basis of Semiconductor Electrochemistry, " J.E.C.S. vol. 126, #5, pp. 855-859, (May 1978).
S. R. Morrison, "The Solid/Liquid Interface", Electrochemistry at Semiconductor and Oxidized Metal Electrodes, Chapter 2, Plenum Press, New York, NY, (1980), pp. 49-78.
Zh. I. Alferov, D. N. Goryachev, A. A. Gurevich, M. N. Mizerov, E. L. Portnoi and B. S. Ryvkin, "Diffraction Gratings Produced on a GaAs Surface by Interference Photoetching", Sov. Phys. Tech. Phys., vol. 21, No. 7, Jul. 1976, pp. 857-859.
D. Lubzens, "Photoetching of InP Mesas for Production of mm-Wave Transferred-Electron Oscillators", Electronics Letters, vol. 13, No. 7, Mar. 31, 1977, pp. 171-172.
F. Kuhn-Kuhnenfeld, "Selective Photoetching of Gallium Arsenide", Journal of the Electrochemical Society: Solid-State Science and Technology, Aug. 1972, pp. 1063-1068.

Affiliated with

Also associated with

Rating

Photoelectrochemical etching of n-type gallium arsenide does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Photoelectrochemical etching of n-type gallium arsenide, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Photoelectrochemical etching of n-type gallium arsenide will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2359868