Photoelectrochemical cell having photoanode with thin boron phos

Details Photoelectrochemical cell having photoanode with thin boron phos Photoelectrochemical cell having photoanode with thin boron phos

1982-08-25

1984-03-20

Weisstuch, Aaron

Chemistry: electrical current producing apparatus, product, and

Deferred action type

Responsive to light

204290R, H01M 636

Patent

active

044381832

ABSTRACT:
A surface prone to corrosion in corrosive environments is rendered anticorrosive by CVD growing a thin continuous film, e.g., having no detectable pinholes, thereon, of boron phosphide. In one embodiment, the film is semiconductive. In another aspect, the invention is an improved photoanode, and/or photoelectrochemical cell with a photoanode having a thin film of boron phosphide thereon rendering it anitcorrosive, and providing it with unexpectedly improved photoresponsive properties.

REFERENCES:
patent: 2677714 (1954-05-01), Auwarter
patent: 2677715 (1954-05-01), Auwarter
patent: 2966424 (1960-12-01), Ruehrwein et al.
patent: 4268711 (1981-05-01), Gurev
K. Shohno et al., "Crystal Growth of Boron Monophosphide Using A B.sub.2 H.sub.6 -PH.sub.3 -H.sub.2 System", J. Crystal Growth, vol. 45, pp. 187-191, (1978).

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