Photoelectro-chemical etching method and apparatus of compound s

Chemistry: electrical and wave energy – Processes and products – Electrostatic field or electrical discharge

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2041294, 20412943, 204DIG9, 204224M, C25F 312, C25F 700

Patent

active

053363795

ABSTRACT:
The photoelectro-chemical etching system of compound semi-conductor is disclosed. The system comprises a laser generator, a shutter to cut off laser beam, a laser beam chopper, a secondary high reflection mirror, a beam expander, a waveform generator, a chopper controller, a potentiostat to apply the reverse or forward voltage to the optical glass cell. Instead of applying the reverse-bias voltage to a semiconductor material, the reverse and/or forward voltage with a uniform pulse period is applied so that homogeneous and damage-free surface is obtained and etching process is made available in a more efficient manner.

REFERENCES:
patent: 4369099 (1983-01-01), Kohl et al.
patent: 4384198 (1983-05-01), Williamson
patent: 4482443 (1984-11-01), Bacon et al.
patent: 4608138 (1986-08-01), Kobayashi
patent: 4622114 (1986-11-01), Glass et al.

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