Photoelectric transducing element

Details Photoelectric transducing element Photoelectric transducing element

1981-03-23

1983-09-20

Reynolds, B. A.

Electrical resistors

Resistance value responsive to a condition

Photoconductive

338 17, 338 19, 357 2, 357 30, H01L 3108, H01L 2714

Patent

active

044059159

ABSTRACT:
A photoelectric transducing element comprising (a) a substrate; (b) first electrode provided on said substrate; (c) first contact layer to form an ohmic contact with said first electrode with respect to electric charge in at least one polarity; (d) a photoconductive layer provided in contact with said first contact layer and composed of an amorphous material containing silicon atom as a matrix and hydrogen atom, or halogen atom, or both, at a ratio of 1 to 30 atomic % with respect to said silicon atom; (e) second contact layer provided in contact with said photoconductive layer; and (f) second electrode to form an ohmic contact with said second contact layer with respect to said charge.

REFERENCES:
patent: 4064521 (1977-12-01), Carlson
patent: 4307372 (1981-12-01), Matsui

Affiliated with

Also associated with

Rating

Photoelectric transducing element does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Photoelectric transducing element, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Photoelectric transducing element will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-590287