Photoelectric transducer element

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Details

357 16, 357 34, H01L 2714, H01L 3100

Patent

active

046494090

ABSTRACT:
A photoelectric transducer element is disclosed wherein a region having a conductivity type opposite to that of a light-receiving region is formed in a surface layer of the light-receiving region of a photoelectric transducer element having a p-n junction. The switching speed of the element can be improved without decreasing either the photosensitivity or dielectric withstand voltage.

REFERENCES:
Holmes et al., "Modified Bipolar Phototransistor", Jan. 27, 1972, Electronics Letters, vol. 8, No. 2, pp. 23-24.

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