1983-10-19
1987-03-10
Davie, James W.
357 16, 357 34, H01L 2714, H01L 3100
Patent
active
046494090
ABSTRACT:
A photoelectric transducer element is disclosed wherein a region having a conductivity type opposite to that of a light-receiving region is formed in a surface layer of the light-receiving region of a photoelectric transducer element having a p-n junction. The switching speed of the element can be improved without decreasing either the photosensitivity or dielectric withstand voltage.
REFERENCES:
Holmes et al., "Modified Bipolar Phototransistor", Jan. 27, 1972, Electronics Letters, vol. 8, No. 2, pp. 23-24.
Roppongi Makoto
Tsuji Kazuaki
Davie James W.
Epps Georgia Y.
Tokyo Shibaura Denki Kabushiki Kaisha
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