Photoelectric transducer

Details Photoelectric transducer Photoelectric transducer

1996-12-19

1998-02-17

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

136258, 136259, 257437, 359580, 359585, 428432, 428469, H01L 3104

Patent

active

057187738

ABSTRACT:
A photoelectric transducer is provided which comprises a first electrode, a second electrode constituted of an antireflection layer, and a semiconductor layer between the first electrode and the second electrode. The antireflection layer comprises a laminated member of a first tin oxide layer containing a first crystalline oxide of grain size of not larger than 20 nm, and a second thin oxide layer containing a second oxide of a second thin oxide layer containing a second crystalline oxide of grain size of not larger than 20 nm.

REFERENCES:
patent: 4419533 (1983-12-01), Czubatyj et al.
patent: 4694116 (1987-09-01), Hayashi et al.
patent: 5064477 (1991-11-01), Delahoy
K. Takahashi et al, "Amorphous Silicon Solar Cells", John Wiley & Sons, New York (1986), pp. 193-194.

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