Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2009-09-02
2011-12-20
Toledo, Fernando L (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S072000, C257S079000, C257S080000, C257S428000, C257S440000, C438S048000, C438S060000, C438S072000, C438S073000, C438S084000
Reexamination Certificate
active
08080856
ABSTRACT:
A photoelectric structure is presented, comprising one or more PiN cells. The PiN cell is formed by an intrinsic semiconductor bulk having front and rear surfaces enclosed between p- and n-type regions extending along side surfaces of said semiconductor bulk. The front and rear surfaces of the intrinsic semiconductor bulk are active surfaces of the PiN cell and said side surfaces of said semiconductor bulk formed with said p- and n-type regions are configured and operable for collecting excess charged carriers generated in said semiconductor bulk in response to collected electromagnetic radiation to which at least one of the active surfaces is exposed during the PiN cell operation.
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Axelevitch Alex
Golan Gady
Shavit Ronen
Axelevitch Alex
Golan Gady
Houston Eliseeva, LLP;
Lee Kyoung
Shavit Ronen
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