Photoelectric semiconductor device capable of generating...

Details Photoelectric semiconductor device capable of generating... Photoelectric semiconductor device capable of generating...

2010-08-03

2011-11-22

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With reflector, opaque mask, or optical element integral...

C257S099000, C257S100000, C257S079000

Reexamination Certificate

active

08063411

ABSTRACT:
A transparent layer and a phosphor layer are covered on the LED chip for increasing light emission efficiency and evenness of the LED. Based on angle-dependent emission strength of the LED chip, the phosphor layer is designed with different thickness or contains different phosphor powder concentration in different section. The lights emitted with different strength from different angle of the LED chip are transformed into uniform compound lights after passing through the phosphor layer that has different thickness or phosphor powder concentration. Micro structures capable of destroying the full reflection occurred on the incident lights are further configured on both the inner and outer surfaces of the phosphor layer to increase the light emission efficiency.

REFERENCES:
patent: 7888698 (2011-02-01), Wu et al.
patent: 2009/0001869 (2009-01-01), Tanimoto et al.
patent: 2009/0015137 (2009-01-01), Su et al.
patent: 100411210 (2008-08-01), None

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