Photoelectric device

Details Photoelectric device Photoelectric device

1975-01-09

1976-09-28

Tupman, W.

Metal working

Method of mechanical manufacture

Assembling or joining

29580, 29583, 357 30, B01J 1700

Patent

active

039823156

ABSTRACT:
An n-type epitaxial layer is grown on a p-type silicon substrate. The epitaxial layer is photo-etched to provide a plurality of isolated regions of n-type conductivity. A silicon dioxide layer is provided on a surface covering the isolated regions and etched portions. The oxide layer is etched to provide a window which allows external light to fall on the exposed isolated region. Heat treatment steps have been reduced to a minimum to prevent lattice defects from occurring, resulting in a photodiode having a higher sensitivity to the visible spectrum range with less dark current.

REFERENCES:
patent: 3701696 (1972-10-01), Mets
patent: 3796612 (1974-03-01), Allison

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