Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2006-05-23
2006-05-23
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S444000, C438S048000
Reexamination Certificate
active
07049673
ABSTRACT:
This photoelectric detection device comprises a matrix of elementary detectors on an insulating substrate. Each of the elementary detectors has a stack consisting of a lower electrode, a layer of a photosensitive material and a phototransparent upper electrode. The upper electrode is common to all the elementary detectors. Each of the lower electrodes is connected independently of one another to a sense circuit. The lower electrodes are each positioned on an individualized insulating zone, which is raised with respect to the insulating substrate. Furthermore, the upper electrode is not flat and is inserted between two adjacent zones until it reaches a level below that of the lower electrodes.
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Guedj Cyril
Moussy Norbert
Burr & Brown
Commissariat A l'Energie Atomique
Nelms David
Nguyen Dao H.
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