Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2008-07-15
2008-07-15
Landau, Matthew C. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S444000, C257SE31124, C257SE31001, C257SE31126, C257S443000, C257SE27114, C257SE27116, C257SE27118, C257S440000
Reexamination Certificate
active
11082901
ABSTRACT:
In a photoelectric converting film stack type solid-state image pickup device, a plurality of photoelectric converting film are stacked on a semiconductor substrate in which a signal readout circuit is formed, each of the photoelectric converting films is sandwiched between a common electrode film and pixel electrode films corresponding to respective pixels, and photo-charges generated in the photoelectric converting films are taken out through the pixel electrode films. In the solid-state image pickup device, a common electrode film for a first photoelectric converting film is used also as a common electrode film for a second photoelectric converting film, the first photoelectric converting film is stacked below the common electrode film, and the second photoelectric converting film is stacked above the common electrode film.
REFERENCES:
patent: 5739851 (1998-04-01), Ohsawa et al.
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Inoue Tomoki
Inuiya Masafumi
Watanabe Mikio
FUJIFILM Corporation
Kim Jay C.
Landau Matthew C.
Sughrue & Mion, PLLC
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