Photoelectric converting device with improved resetting transist

Radiant energy – Ionic separation or analysis – Static field-type ion path-bending selecting means

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Details

357 32, 357 58, 250211J, 2505781, H01L 2714

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active

051012529

ABSTRACT:
In a photoelectric converter provided with a phototransistor having at least two main electrode areas of a first conductive type of semiconductor and a control electrode area of a different conductive type of semiconductor, and a field effect transistor having the same control electrode area, a channel area, a main electrode area of the second conductive type and a gate electrode above the channel area, the channel area is formed in a high impurity concentration area of the first conductive type with a depth greater than that of the control electrode area and of the field effect transistor main electrode area. The channel area arrangement provides improved performance and reliability in a photoconverter requiring a large depletion layer.

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