Photoelectric converting device and image processing apparatus u

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material

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257 65, 257446, 257458, 257444, H01L 2714

Patent

active

052452018

ABSTRACT:
A photoelectric converting device has non-monocrystalline semiconductor layers of PIN structure laminated on mutually isolated plural pixel electrodes. P- or N-doped layer on the pixel electrode contains at least a microcrystalline structure. N- or P-doped layer on the area other than the pixel electrode is amorphous.

REFERENCES:
patent: 4523214 (1985-06-01), Hirose et al.
patent: 4644406 (1987-02-01), Nishigaki et al.
patent: 4971919 (1990-11-01), Yamazaki
patent: 5084747 (1992-01-01), Miyawaki
patent: 5091764 (1992-02-01), Asaoka et al.

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