Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1991-12-31
1993-09-14
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 65, 257446, 257458, 257444, H01L 2714
Patent
active
052452018
ABSTRACT:
A photoelectric converting device has non-monocrystalline semiconductor layers of PIN structure laminated on mutually isolated plural pixel electrodes. P- or N-doped layer on the pixel electrode contains at least a microcrystalline structure. N- or P-doped layer on the area other than the pixel electrode is amorphous.
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patent: 4971919 (1990-11-01), Yamazaki
patent: 5084747 (1992-01-01), Miyawaki
patent: 5091764 (1992-02-01), Asaoka et al.
Gofuku Ihachiro
Kozuka Hiraku
Sugawa Shigetoshi
Bowers Courtney A.
Canon Kabushiki Kaisha
James Andrew J.
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