Photoelectric converting device and image processing apparatus u

Details Photoelectric converting device and image processing apparatus u Photoelectric converting device and image processing apparatus u

1993-12-06

1995-05-09

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257 56, 257 55, 257 59, 257458, 136258, 136261, H01L 2714

Patent

active

054142750

ABSTRACT:
A photoelectric converting device with PIN structure includes an amorphous I-type semiconductor layer and charge injection blocking layers positioned to sandwich the I-type layer. At least one of the charge injection blocking layers comprises an amorphous P- or N-semiconductor layer in contact with the I-type layer and an amorphous P- or N-semiconductor layer containing microcrystalline structure.

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Patent Abstracts of Japan, No. 9, No. 263<E-351>(1986), Oct. 19, 1985.
Patent Abstracts of Japan, vol. 11, No. 36 [E-477](2483), Feb. 3, 1987.

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