Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1994-07-26
1998-04-28
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257 53, 257 55, H01L 31107
Patent
active
057448493
ABSTRACT:
A photoelectric converting device has a photoelectric converting part which consists of a light absorbing layer of a predetermined forbidden band width Eg1 and a carrier multiplying layer, positioned in laminate structure between charge injection blocking layers. The multiplying layer is composed of a layer or plural layers with a stepback structure of the forbidden band width having a minimum width Eg2 and a maximum width Eg3 in alternate manner and showing a continuous variation therebetween in each layer. The charge injection blocking layers, light absorbing layer and carrier multiplying layer are composed of non-monocrystalline semiconductors and at least having the minimum forbidden band width Eg2 and/or the maximum forbidden band width Eg3 contain a microcrystalline structure.
REFERENCES:
patent: 4409134 (1983-10-01), Yamazaki
patent: 4508609 (1985-04-01), Moustakas et al.
patent: 4962412 (1990-10-01), Shinohara et al.
patent: 5101255 (1992-03-01), Ishioka et al.
patent: 5155351 (1992-10-01), Yamanobe et al.
IEEE Trans. Elec. Dev., vol. 35, No. 8, Aug. 1988, pp. 1279-1283, S.C. Jwo, et al. "Amorphous Si/SiC Superlattice Avalanche Photodiodes".
Elec. Letters, vol. 16, No. 12, 5 Jun. 1980, pp. 467-469, Chin, et al., "Impact Ionisation in Multilayered Hetero Junction Structures".
Patent Abstracts of Japan, vol. 14, No. 187 (E-917) Apr. 16, 1990.
Patent Abstracts of Japan, vol.13, No.34 (E-708) Jan. 25, 1989.
Sealy, D.J. "Review of III-V Semiconductor Materials and Devices", J. Inst. of Electronic & Radio Engineers -Supplements, vol. 57, No. 1-Su, Jan. 1987.
Pearsall, "ZAP| Introducing the Zero-Bias Avalanche Photodiode", Electronics Letters, vol. 18, No. 2, Jun. 10, 1982.
McIntyre, "Multiplication Noise in Uniform Avalanche Diodes", IEEE Tran. on Elec. Dev., vol. 13, No. 1, Jan. 1966.
Williams, et al., "The Graded Bandgap Multilayer Avalanche Photodiode: A New Low-Noise Detector", vol. EDL-3, No. 3, Mar. 1982.
Canon Kabushiki Kaisha
Guay John
Jackson Jerome
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