Photoelectric converting device

Details Photoelectric converting device Photoelectric converting device

1994-11-10

1996-03-19

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257462, 257463, 257464, H01L 2714, H01L 3100

Patent

active

055005500

ABSTRACT:
A photoelectric converting device comprises a first semiconductor area of a first conductivity type, a second semiconductor area of a second conductivity type, and a third semiconductor area of the first conductivity type. A charge is photoelectrically excited by light incident on the second semiconductor area, and is derived from the first semiconductor area after amplification.
A fourth semiconductor area of the first conductivity type is formed in contact with the second semiconductor area and so positioned corresponding to the third semiconductor area. During operation of the device, a depletion layer extending from the interface between the third and fourth semiconductor areas reaches a depletion layer extending from the interface of the third and second semiconductor areas.

REFERENCES:
patent: 4633287 (1986-12-01), Yamazaki et al.
patent: 4649409 (1987-03-01), Roppongi et al.
patent: 4814846 (1989-03-01), Matsumoto et al.
patent: 4879470 (1989-11-01), Sugawa et al.
patent: 4972243 (1990-11-01), Sugawa et al.
Allison, J., "Electronic Engineering Semiconductors and Devices", 1990, pp. 178-183.
Journal of Electronic Engineering, "Major Properties and Primary Applications of Phototransistors", vol. 19, Sep. 1982, No. 189, Tokyo, Japan, pp. 113-115.

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