Photoelectric converter with plural regions

Details Photoelectric converter with plural regions Photoelectric converter with plural regions

1992-03-31

1993-09-14

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

With light activation

257114, 257435, 257440, 257462, 257443, H01L 2714

Patent

active

052452034

ABSTRACT:
A photoelectric converter of semiconductor transistor comprises two semiconductor regions of same electroconductive type and a semiconductor region of opposite electroconductive type to that of the two semiconductor regions. The semiconductor region of opposite electroconductive type is irradiated with a light. An amplified power is output from at least one of the two semiconductor regions of same electroconductive type. The semiconductor region of the opposite electroconductive type comprises a semiconductor region that accumulates a charge generated by light input and a semiconductor region acting as a control electrode region for the semiconductor transistor.

REFERENCES:
patent: 4407010 (1983-09-01), Baji et al.
patent: 4665422 (1987-05-01), Hirao et al.
patent: 4682203 (1987-07-01), Konda
patent: 4737832 (1989-04-01), Kyuma
Ohba et al, "MOS Area Sensor: Part II-Low Noise MOS Area Sensor with Antiblooming Photodiodes," IEEE Transactions on Electron Devices, vol. ED-27, No. 8, Aug. 1980, pp. 1682-1687.

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