Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Patent
1993-05-20
1994-05-10
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
257 59, 257444, 257435, 257438, 136258, H01L 2714
Patent
active
053110382
ABSTRACT:
An improved photoelectric converter with reduced dark current includes a first electrode on a substrate covered by a semiconductor layer for photoelectric conversion. A second electrode is disposed on the semiconductor layer. An electron injection preventive layer is inserted between the semiconductor layer and the second electrode for preventing electrons from being injected from the second electrode into the semiconductor layer. The electron injection preventive layer is formed of a material satisfying the inequality:
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Katayama et al, "The Characteristics Of Buried a-Si:H And a-SiC:H p-i-n Photodiode Sensor", ITE Annual Convention, 1988, pp. 17-18.
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Hatanaka et al, Electronic Information Communication Society Technical Report, 1987, pp. 19-23, "Energy-Band Discontinuities in a Heterojunction of A-SixNy/c-Si".
Nishioka Yasutaka
Yamamoto Hidekazu
Mintel William
Mitsubishi Denki & Kabushiki Kaisha
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