Photoelectric converter with electron injection preventive layer

Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material

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257 59, 257444, 257435, 257438, 136258, H01L 2714

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active

053110382

ABSTRACT:
An improved photoelectric converter with reduced dark current includes a first electrode on a substrate covered by a semiconductor layer for photoelectric conversion. A second electrode is disposed on the semiconductor layer. An electron injection preventive layer is inserted between the semiconductor layer and the second electrode for preventing electrons from being injected from the second electrode into the semiconductor layer. The electron injection preventive layer is formed of a material satisfying the inequality:

REFERENCES:
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Miyagawa et al, "A New, Pre-Discharge Boron Doping Method For Amorphous Silicon Photoconversion Layer in HDTV Image Sensor", IEEE, IEDM, 1988, pp. 74-77.
Katayama et al, "The Characteristics Of Buried a-Si:H And a-SiC:H p-i-n Photodiode Sensor", ITE Annual Convention, 1988, pp. 17-18.
Tanioka et al, "Avalanche-Mode a-Se Photoconductive Target For High Sensitive Camera Tube", ITE, vol. 44, No. 8, 1990, pp. 1074-1083.
Yano et al, Proceedings Of National Conference Of Television Association, 1985, pp. 63-64 (No Title Available).
Hatanaka et al, Electronic Information Communication Society Technical Report, 1987, pp. 19-23, "Energy-Band Discontinuities in a Heterojunction of A-SixNy/c-Si".

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