Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1996-10-23
2000-06-13
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 54, 257 72, 257449, 257291, 25037009, 25037014, 349 41, H01L 27146, H01L 31119, G01J 146
Patent
active
060752564
ABSTRACT:
A photoelectric converter of a high signal-to-noise ratio, low cost, high productivity and stable characteristics and a system including the above photoelectric converter. The photoelectric converter includes a photoelectric converting portion in which a first electrode layer, an insulating layer for inhibiting carriers from transferring, a photoelectric converting semiconductor layer of a non-single-crystal type, an injection blocking layer for inhibiting a first type of carriers from being injected into the semiconductor layer and a second electrode layer are laminated in this order on an insulating substrate.
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"Extended Abstracts of the 15th Conference on Solid State Devices and Materials", Tokyo, Japan, Aug. 30-Sep. 1, 1983, ISBN 4-930813-04-2, 1983, Tokyo, Japan, Japan Soc. Appl. Phys, Japan, pp. 201-204, XP002039214.
Patent Abstracts of Japan, vol. 013, No. 428 (P-936), Sep. 25, 1989 & JP 01 161251 A (Fujitsu Ltd), Jun. 23, 1989.
Itabashi Satoshi
Kaifu Noriyuki
Kobayashi Isao
Mizutani Hidemasa
Takeda Shinichi
Canon Kabushiki Kaisha
Jackson, Jr. Jerome
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