Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2007-01-09
2007-01-09
Toledo, Fernando L. (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C257S291000, C257S292000, C257S462000
Reexamination Certificate
active
10939053
ABSTRACT:
A photoelectric converter has a first semiconductor region having a first conductivity type, a pixel region for accumulating generated carriers, a second semiconductor region having a second conductivity type disposed within the first semiconductor region and inside the pixel region, an electrode region having the second conductivity type disposed on the second semiconductor region, and an oxide film disposed around the electrode region. A first aluminum wiring contacts the electrode region via a contact hole disposed in an intermediate insulating film for transforming a signal according to a quantity of the generated carriers accumulated in the pixel region. A second aluminum wiring encircles an outer periphery of the pixel region and is held at a predetermined constant potential. A transparent conductive film is disposed on the oxide film and inside the second semiconductor region and contacts the second aluminum wiring.
REFERENCES:
patent: 6703653 (2004-03-01), Kim
patent: 6882022 (2005-04-01), Hynecek
patent: 6960795 (2005-11-01), Rhodes
Adams & Wilks
Seiko Instruments Inc.
Toledo Fernando L.
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