Photoelectric conversion semiconductor manufacturing method

Details Photoelectric conversion semiconductor manufacturing method Photoelectric conversion semiconductor manufacturing method

1982-03-01

1984-08-07

Hoffman, James R.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 38, 427 74, G03G 5082

Patent

active

044644159

ABSTRACT:
A semi-amporphous, photoelectric conversion semiconductor manufacturing method in which substrates are disposed in a reaction chamber having a gas inlet and a gas outlet and a gas mixture containing at least a semiconductor material gas which includes a dangling bond neutralizer and a carrier gas is introduced into the reaction chamber. An electromagnetic field is applied to the gas mixture to ionize it into a gas mixture plasma in the reaction chamber. The plasma is passed to the substrates where the semiconductor material doped with the neutralizer is deposited on each substrate. The semiconductor material deposited on each substrate becomes a semi-amporphous, photoelectric conversion semiconductor by holding the atmospheric pressure in the reaction chamber below 1 atm and maintaining the substrate at a temperature lower than the temperature at which the semiconductor material on the substrate becomes crystallized.

REFERENCES:
patent: 4265991 (1981-05-01), Hirai et al.

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