Photoelectric conversion semiconductor device with noise limitin

Details Photoelectric conversion semiconductor device with noise limitin Photoelectric conversion semiconductor device with noise limitin

1988-02-10

1991-02-19

Hille, Rolf

Facsimile and static presentation processing

Facsimile

Specific signal processing circuitry

357 42, 357 2, 358213150, H01L 27140, H01L 31000, H01L 45000, H04N 3140

Patent

active

049948776

ABSTRACT:
A photoelectric conversion semiconductor device comprising photelectric conversion elements, selection switching elements and a driving circuit for sequentially driving the photoelectric elements. The above structural elements are formed on an insulating and transparent substrate. The driving circuit including a plurality of one-bit shift registers each having one switch and two series-connected complementary metal oxide semiconductor (CMOS) inverters. An input signal of each one-bit shift register is supplied to one of the CMOS inverters. An output signal of the other of the CMOS inverters is supplied to a next stage of the one-bit shift register. One of the output signals of the two CMOS inverters is supplied to one of the selection switching elements.

REFERENCES:
patent: 4472821 (1984-09-01), Mazin et al.
patent: 4567374 (1986-01-01), Takenouchi et al.
patent: 4575638 (1986-03-01), Okumura
patent: 4685195 (1987-08-01), Szydlo et al.
patent: 4845375 (1989-07-01), Tsushima

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