Photoelectric conversion semiconductor device with insulation fi

Details Photoelectric conversion semiconductor device with insulation fi Photoelectric conversion semiconductor device with insulation fi

1994-03-16

1998-02-17

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Light responsive structure

257438, 257463, 257464, 257627, H01L 31107

Patent

active

057194149

ABSTRACT:
A photoelectric conversion semiconductor device is characterized in that a second conductivity type impurity region is formed in a first conductivity type semiconductor substrate, the second conductivity type impurity region having a depth of 0.1 .mu.m or less and a peak density of 1.times.10.sup.19 atoms/cm.sup.3 or more. A method of manufacturing a photoelectric conversion semiconductor device is characterized by a step of ion-injecting boron or boron fluoride with a dose amount of 1.times.10.sup.16 to 5.times.10.sup.16 atoms/cm.sup.2 into a semiconductor substrate as an impurity.

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Eric A. Swanson, et al., "Measurements of Natural Radiation Effects in Low Noise Avalanche Photodiode", IEEE Transactions on Nuclear Science, No. 6, pp. 1658-1661.

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