Photoelectric conversion semiconductor device

Details Photoelectric conversion semiconductor device Photoelectric conversion semiconductor device

1996-10-18

1998-04-28

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257458, 257461, H01L 31107, H01L 31075, H01L 31105, H01L 31117

Patent

active

057448507

ABSTRACT:
A novel photoelectric conversion semiconductor device having an amplifying function which can be readily fabricated is provided. An N.sup.+ -type impurity domain whose impurity concentration is higher than that of an N.sup.- -type semiconductor substrate is formed on one surface thereof and a P.sup.+ -type impurity domain is formed on the opposite surface. An SiO.sub.2 film, an Si.sub.3 N.sub.4 film and an SiO.sub.2 film are formed extending to the domain of the N.sup.- -type semiconductor substrate, exceeding the N.sup.+ -type impurity domain. An anode electrode is formed on the N.sup.+ -type impurity domain and a cathode electrode is formed on the P.sup.+ -type impurity domain. A polysilicon gate electrode is formed on the SiO.sub.2 film, i.e. the top layer, and an Al gate electrode is formed thereon. A reverse voltage is applied between the anode electrode and the cathode electrode and a predetermined voltage is applied between the anode electrode and the Al gate electrode.

REFERENCES:
patent: 5021854 (1991-06-01), Huth
patent: 5345103 (1994-09-01), Aoki

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