Photoelectric conversion semiconductor device

Batteries: thermoelectric and photoelectric – Thermoelectric – Radiation pyrometer

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357 237, 136256, H01L 2714, H01L 3100, H01L 2978

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active

051423316

ABSTRACT:
A first conductivity type first semiconductor layer is formed on an insulation substrate and a second conductivity type second semiconductor layer is formed on the first semiconductor layer in order to provide a semiconductor device having a highly reliable electrode structure. In order to accomplish this electrode structure, a first electrode which is insulated from the first semiconductor layer with an insulation film, is formed on an area extending from a part of the second semiconductor layer to an exposed surface of the insulation substrate which is not covered with the first semiconductor layer. A second electrode, which is separate from the second semiconductor layer, is formed on a part of the first semiconductor layer which is not covered with the second semiconductor layer. Using this construction, a solar battery cell can be realized. Additionally, the first electrode has a connection region on the exposed surface of the insulation substrate in order to provide connection with an external terminal. This enables welding or bonding with an external terminal on this particular connection region.

REFERENCES:
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patent: 4278473 (1981-07-01), Borden
patent: 4286278 (1981-08-01), Lorenze, Jr. et al.
patent: 4525732 (1985-06-01), Bayraktaroglu
patent: 4532699 (1985-08-01), Bourdillot et al.
patent: 4564720 (1986-01-01), Hogan
patent: 4737197 (1988-04-01), Nagahara
patent: 4872925 (1989-10-01), McMaster
Crystal Research and Technology, 1981, pp. 989-994.
IEEE Transactions on Electron Devices, 1984, vol. ED-31 No. 5, pp. 637-647.

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