Photoelectric conversion element having a surface member or a pr

Batteries: thermoelectric and photoelectric – Photoelectric – Panel or array

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136251, 136293, H01L 2500

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active

06153823&

ABSTRACT:
A photoelectric conversion element comprising a substrate, a plurality of semiconductor junctions made of non-single-crystalline semiconductors formed on the substrate, and a surface material covering the semiconductor junctions is provided. The semiconductor junctions have respective absorption spectra different from each other and respective photo-deterioration rates different from each other. A photo-current generated by the semiconductor junction of the least deterioration rate is larger than that by the semiconductor junction of the greatest deterioration rate when no surface material is present, and when present, the surface material absorbs light in a range corresponding to a part of the absorption spectrum of the semiconductor junction of the least deterioration rate, so that the photo-current generated by the semiconductor junction of the least deterioration rate becomes smaller than that by the semiconductor junction of the greatest deterioration rate.

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D.L. Staebler, "Reversible Conductivity Changes in Discharge--Produced Amorphous Si", App. Phys. Let., vol. 31, No. 4, Aug. 15, 1977, pp. 292-294 .

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