Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2005-10-18
2005-10-18
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S461000, C257S463000, C257S438000, C257S458000, C257S185000, C257S059000, C257S021000, C257S186000, C257S338000
Reexamination Certificate
active
06956273
ABSTRACT:
In a photoelectric conversion element which is formed by alternately stacking a region of a first conductivity type and a region of a second conductivity type as a conductivity type opposite to the first conductivity type to form a multi-layered structure, in which junction surfaces between the neighboring regions of the first and second conductivity types are formed to have depths suited to photoelectrically convert light in a plurality of different wavelength ranges, and which outputs signals for respective wavelength ranges, a region of a conductivity type opposite to the conductivity type of a surface-side region of the junction surface closest to a surface is formed in the surface of the surface-side region. Thus, highly color-separable signals which suffer less color mixture upon reading out signals from a plurality of photodiode layers is read out.
REFERENCES:
patent: 3860956 (1975-01-01), Kubo et al.
patent: 5121183 (1992-06-01), Ogasawara et al.
patent: 5500550 (1996-03-01), Morishita
patent: 5644124 (1997-07-01), Hamada et al.
patent: 5667597 (1997-09-01), Ishihara
patent: 5723877 (1998-03-01), Sugawa et al.
patent: 5841180 (1998-11-01), Kobayashi et al.
patent: 5880494 (1999-03-01), Watanabe
patent: 5965675 (1999-10-01), Kellum et al.
patent: 5965875 (1999-10-01), Merrill
patent: 6153823 (2000-11-01), Shiozaki et al.
patent: 6501062 (2002-12-01), Tashiro
patent: 6606120 (2003-08-01), Merrill et al.
patent: 2003/0173582 (2003-09-01), Hatano et al.
Erdem Fazli
Flynn Nathan J.
Morgan & Finnegan , LLP
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