Batteries: thermoelectric and photoelectric – Photoelectric – Cells
Patent
1993-11-12
1995-07-04
Weisstuch, Aaron
Batteries: thermoelectric and photoelectric
Photoelectric
Cells
136258, 136293, 257458, 320 2, 320 27, H01L 31075, H01L 310376, H01L 310384
Patent
active
054296854
ABSTRACT:
The present invention provides a photovoltaic element in which the open-circuit voltage and the path length of holes are improved by preventing the recombination of photoexcited carriers.
The p-i-n junction type photovoltaic element is composed of a p-type layer, an i-type layer of a laminated structure consisting of an i-type layer formed by RF plasma CVD on the p-type layer side and an i-type layer formed by microwave (.mu.W) CVD on the n-type layer side, or an i-type layer formed by microwave (.mu.W) plasma CVD on the p-type layer side and an i-type layer formed by RF plasma CVD on the n-type layer side, characterized in that the i-type layer formed by .mu.W plasma CVD is formed by a process in which a lower .mu.W energy and a higher RF energy than the .mu.W energy needed to decompose 100% of the source gas are simultaneously applied to a source gas containing Si and Ge at a pressure of 50 mTorr or less, such that the minimum value of the bandgap is shifted toward the p-type layer side, away from the center of the i-type layer, and the i-type layer formed by RF plasma CVD is formed 30 nm thick or less by using a source gas containing a silicon-containing gas at a deposition rate of 2 nm/sec or less.
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Aoike Tatsuyuki
Hayashi Ryo
Niwa Mitsuyuki
Saito Keishi
Sano Masafumi
Canon Kabushiki Kaisha
Weisstuch Aaron
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