Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2005-05-24
2008-05-06
Louie, Wai-Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S431000, C257S433000, C257S436000, C257S437000, C257S439000, C257SE27123
Reexamination Certificate
active
07368797
ABSTRACT:
In a back-surface electrode type photoelectric conversion element having electrodes and semiconductor layers for collecting carriers disposed only on a back surface side of a semiconductor substrate, a semiconductor thin film that is larger in band gap than the semiconductor substrate and that contains an element causing a conductivity identical to or different from a conductivity of the semiconductor substrate is provided on a light-receiving surface side of the semiconductor substrate, and a diffusion layer is formed on a surface of the semiconductor substrate. Alternatively, 95% or more of light beams having a wavelength of anywhere from 800 nm to 2000 nm are caused to penetrate the light-receiving surface side of the semiconductor substrate, and an insulative thin film containing an element causing a conductivity identical to or different from the conductivity of the semiconductor substrate is provided so as to form a diffusion layer on the surface of the semiconductor substrate through diffusion of the element.
REFERENCES:
patent: 5103851 (1992-04-01), Nishida et al.
patent: 5437734 (1995-08-01), Matsushita
patent: 5738732 (1998-04-01), Nakamura et al.
patent: 6071753 (2000-06-01), Arimoto
patent: 6130380 (2000-10-01), Nakamura
patent: 6166320 (2000-12-01), Nagashima et al.
patent: 6548751 (2003-04-01), Sverdrup et al.
patent: 6927417 (2005-08-01), Nagashima et al.
patent: 2002/0011590 (2002-01-01), Nagashima
patent: 54041091 (1979-03-01), None
patent: 55154781 (1980-12-01), None
patent: 60-76176 (1985-04-01), None
patent: 63316486 (1988-12-01), None
patent: 4-27169 (1992-01-01), None
patent: 4-192371 (1992-07-01), None
patent: 05082812 (1993-04-01), None
patent: 09055521 (1997-02-01), None
patent: 11274532 (1999-10-01), None
patent: 11317533 (1999-11-01), None
patent: 200196114 (2000-07-01), None
patent: 2001-189474 (2001-07-01), None
patent: WO99/48157 (1999-09-01), None
A. Aberle et al, “Progress in low-temperature surface passivation of silicon solar cells using remote-plasma silicon nitride,”Progress in Photovoltaics: Research and Applications, vol. 5, pp. 29-50 (1997).
A. Aberle et al., “High-efficiency silicon solar cells: Si/SiO2interface parameters and their impact on device performance,”Progress in Photovoltaics: Research and Applications, vol. 2, pp. 265,276 (1994).
T. Nagashima et al., “Three-terminal tandem solar cells with a back-contact type bottom cell,” Toyota Motor Corporation,IEEE, pp. 1193-1196 (2000).
Hansson et al., “Growth of high quality c-SiGe p-n double layers for high-efficiency solar cells,”First WCPEC, IEEE, pp. 1254-1257, Dec. 5-9, 1994; Hawaii.
R. A. Sinton et al., “An optimization study of Si point-contact concentrator solar cells,”IEEE Photovoltaic Specialists Conference, pp. 1201-1208 (1987).
P. J. Verlinden et al., “High efficiency silicon point-contact solar cells for concentrator and high value one-sun application,”13thEuropean Photovoltaic Solar Energy Conference, pp. 1477-1480 (Apr. 1994).
W. Warta et al., “The effect of surface charges on the recombination at Si-SiO2interfaces,”Fundamentals, Novel Devices and New Materials, pp. 100-103 (Jul. 1988).
J. Dicker et al., “Characterization of high-efficiency silicon solar cells with rear side contacts,”Fundamentals, Novel Devices and New Materials, pp. 95-99 (Jul. 1998).
M. Kerr et al., “Comparison of the open circuit voltage of simplified PERC cells passivated with PECVD silicon nitride and thermal silicon oxide,”Progress in Photovoltaics: Research and Applications, vol. 8, pp. 529-536 (May 2000).
Japanese Official Action dated Oct. 16, 2007.
Nagashima Tomonori
Okumura Kenichi
Louie Wai-Sing
Toyota Jidosha & Kabushiki Kaisha
LandOfFree
Photoelectric conversion element and method of manufacturing... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Photoelectric conversion element and method of manufacturing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Photoelectric conversion element and method of manufacturing... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3983706