Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2005-08-09
2005-08-09
Zarneke, David (Department: 2829)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S053000, C257S063000, C257S065000, C257S076000, C136S249000, C136S255000, C136S256000, C136S259000
Reexamination Certificate
active
06927417
ABSTRACT:
In a back-surface electrode type photoelectric conversion element having electrodes and semiconductor layers for collecting carriers disposed only on a back surface side of a semiconductor substrate, a semiconductor thin film that is larger in band gap than the semiconductor substrate and that contains an element causing a conductivity identical to or different from a conductivity of the semiconductor substrate is provided on a light-receiving surface side of the semiconductor substrate, and a diffusion layer is formed on a surface of the semiconductor substrate. Alternatively, 95% or more of light beams having a wavelength of anywhere from 800 nm to 2000 nm are caused to penetrate the light-receiving surface side of the semiconductor substrate, and an insulative thin film containing an element causing a conductivity identical to or different from the conductivity of the semiconductor substrate is provided so as to form a diffusion layer on the surface of the semiconductor substrate through diffusion of the element.
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Nagashima Tomonori
Okumura Kenichi
Finnegan Henderson Farabow Garrett & Dunner LLP
Menz Douglas
Toyota Jidosha & Kabushiki Kaisha
Zarneke David
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